New Low Noise Amplifier research presented in the conference

Jun 23, 2021

We are one step closer to developing the new generation Low Noise Amplifier that can be used in space, 5G technologies and radar sensor systems.

On June 24, Head of RF Group Mantas Sakalas took part in an online conference organised by the World Academy of Science, Engineering and Technology. He presented an analysis and design of an ultrawideband 1.8GHz to 43GHz Low Noise Amplifier (LNA) in 0.1 μm Galium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology.

The novel design conducted together Paulius Sakalas, who is a senior research fellow in BPTI, outperforms the State of the Art reported LNA products in terms of combined core performance measures and enbales ultra-wideband low noise operation, which is of key importance for future digital wideband receiver systems.